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SMD Type
MOSFET
MOS Field Effect Transistor 2SK3713
TO-263
Features
Super high VGS(off): VGS(off) = 3.8 to 5.8 V Low Crss: Crss = 6.5 pF TYP.
+0.2 8.7-0.2 +0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Low QG: QG = 25 nC TYP. Low on-state resistance:
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
RDS(on) = 0.83
MAX. (VGS = 10 V, ID = 5 A)
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 600 30 10 35 1.5 100 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 450V VGS = 10 V ID =10A ID=5A,VGS(on)=10V,RG=0 ,VDD=150V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=600V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=5A VGS=10V,ID=5A 3.8 2.5 4.8 4.6 0.68 1460 250 6.5 26 8.5 30 5.2 25 12 9 0.83 pF pF pF ns ns ns ns nC nC nC Min Typ Max 10 100 5.8 Unit A nA V S
5.60
1 Gate 2 Drain 3 Source
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